NCE2007N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE2007N
Маркировка: 2007N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.5 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.2 V
Максимально допустимый постоянный ток стока |Id|: 6.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 12 nC
Время нарастания (tr): 11 ns
Выходная емкость (Cd): 220 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.022 Ohm
Тип корпуса: SOT23
NCE2007N Datasheet (PDF)
nce2007n.pdf
Pb Free Producthttp://www.ncepower.com NCE2007NSNCE N-Channel Enhancement Mode Power MOSFET Description D1D2The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Ge
nce2007ns.pdf
http://www.ncepower.com NCE2007NSNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2007NS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 6.5A
nce2008e.pdf
Pb Free Producthttp://www.ncepower.com NCE2008ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features
nce2003.pdf
Pb Free Producthttp://www.ncepower.com NCE2003N and P-Channel Enhancement Mode Power MOSFET Description The NCE2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =
nce2004ne.pdf
Pb Free Producthttp://www.ncepower.com NCE2004NENCE N-Channel Enhancement Mode Power MOSFET Description The NCE2004NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features
nce2008n.pdf
http://www.ncepower.com NCE2008NSNCE N-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The NCE2008N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features
nce2006y.pdf
http://www.ncepower.com NCE2006YNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =6A RDS(ON)
nce2006ne.pdf
NCE2006NEhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE2006NE uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications .It is ESD protested.Schematic diagramGeneral Features V = 20V,I =7ADS D
nce2004y.pdf
NCE2004Yhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2004Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =4A RDS(ON)
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