NCE2302 Todos los transistores

 ..1. Size:234K  ncepower
 nce2302.pdf

Pb Free Product http //www.ncepower.com NCE2302 NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram General Features

 0.1. Size:242K  ncepower
 nce2302c.pdf

Pb Free Product http //www.ncepower.com NCE2302C NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Schematic diagram VD

 0.2. Size:245K  ncepower
 nce2302b.pdf

Pb Free Product http //www.ncepower.com NCE2302B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VD

 8.1. Size:262K  ncepower
 nce2301a.pdf

Pb Free Product http //www.ncepower.com NCE2301A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -15V,ID = -3.0A Schematic diagram

 8.2. Size:257K  ncepower
 nce2301c.pdf

Pb Free Product http //www.ncepower.com NCE2301C NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -15V,

 8.3. Size:330K  ncepower
 nce2301e.pdf

Pb Free Product http //www.ncepower.com NCE2301E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 8.4. Size:350K  ncepower
 nce2309.pdf

http //www.ncepower.com NCE2309 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2309 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-1.6A Schematic diagram RDS(ON)

 8.5. Size:344K  ncepower
 nce2304.pdf

Pb Free Product http //www.ncepower.com NCE2304 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE2304 uses advanced trench technology to provide G excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = 30V,ID = 3.6A RDS(ON)

 8.6. Size:329K  ncepower
 nce2303.pdf

Pb Free Product http //www.ncepower.com NCE2303 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE2303 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. S General Features VDS = -30V,ID = -2.0A Schematic diagram RDS(ON)

 8.7. Size:637K  ncepower
 nce2308x.pdf

http //www.ncepower.com NCE2308X NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE2308X uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S Schematic Diagram General Features V =60V,I =3A DS D R

 8.8. Size:308K  ncepower
 nce2305a.pdf

Pb Free Product http //www.ncepower.com NCE2305A NCE P-Channel Enhancement Mode Power MOSFET D Description The NCE2305A uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -12V,

 8.9. Size:241K  ncepower
 nce2301.pdf

Pb Free Product http //www.ncepower.com NCE2301 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -20V,ID = -3A

 8.10. Size:261K  ncepower
 nce2301f.pdf

Pb Free Product http //www.ncepower.com NCE2301F NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -20V,

 8.11. Size:249K  ncepower
 nce2301d.pdf

Pb Free Product http //www.ncepower.com NCE2301D NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE2301D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -20V,

 8.12. Size:335K  ncepower
 nce2305.pdf

Pb Free Product http //www.ncepower.com NCE2305 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -20V,ID

 8.13. Size:250K  ncepower
 nce2301b.pdf

Pb Free Product http //www.ncepower.com NCE2301B NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -20V,

 8.14. Size:1748K  cn vbsemi
 nce2305a.pdf

NCE2305A www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23