NCE2302 - описание и поиск аналогов

 

Аналоги NCE2302. Основные параметры


   Наименование производителя: NCE2302
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.059 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для NCE2302

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE2302 даташит

 ..1. Size:234K  ncepower
nce2302.pdfpdf_icon

NCE2302

Pb Free Product http //www.ncepower.com NCE2302 NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram General Features

 0.1. Size:242K  ncepower
nce2302c.pdfpdf_icon

NCE2302

Pb Free Product http //www.ncepower.com NCE2302C NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Schematic diagram VD

 0.2. Size:245K  ncepower
nce2302b.pdfpdf_icon

NCE2302

Pb Free Product http //www.ncepower.com NCE2302B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VD

 8.1. Size:262K  ncepower
nce2301a.pdfpdf_icon

NCE2302

Pb Free Product http //www.ncepower.com NCE2301A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -15V,ID = -3.0A Schematic diagram

Другие MOSFET... NCE2007N , NCE2010E , NCE2030 , NCE2030K , NCE2060K , NCE20P45Q , NCE20P70G , NCE2301 , STP80NF70 , NCE2303 , NCE2304 , NCE2305 , NCE2309 , NCE2312 , NCE2312A , NCE2333Y , NCE3008M .

 

 
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