NCE3011E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE3011E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: SOP8

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NCE3011E datasheet

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 nce3011e.pdf pdf_icon

NCE3011E

Pb Free Product http //www.ncepower.com NCE3011E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. Schematic diagram General Features

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 nce3018as.pdf pdf_icon

NCE3011E

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 nce3013j.pdf pdf_icon

NCE3011E

http //www.ncepower.com NCE3013J NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3013J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =13A RDS(ON)

 8.3. Size:398K  ncepower
 nce3010s.pdf pdf_icon

NCE3011E

Pb Free Product http //www.ncepower.com NCE3010S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =10A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE2303, NCE2304, NCE2305, NCE2309, NCE2312, NCE2312A, NCE2333Y, NCE3008M, 10N65, NCE3018AS, NCE3020Q, NCE3025Q, NCE3035Q, NCE3050, NCE3050K, NCE3065K, NCE3080IA