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NCE3011E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE3011E
   Маркировка: 3011E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17.5 nC
   trⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 260 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для NCE3011E

 

 

NCE3011E Datasheet (PDF)

 ..1. Size:357K  ncepower
 nce3011e.pdf

NCE3011E NCE3011E

Pb Free Producthttp://www.ncepower.com NCE3011ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE3011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. Schematic diagram General Features

 8.1. Size:388K  ncepower
 nce3018as.pdf

NCE3011E NCE3011E

Pb Free Producthttp://www.ncepower.com NCE3018ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3018AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =18A Schematic diagram RDS(ON)

 8.2. Size:308K  ncepower
 nce3013j.pdf

NCE3011E NCE3011E

http://www.ncepower.com NCE3013JNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3013J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =13A RDS(ON)

 8.3. Size:398K  ncepower
 nce3010s.pdf

NCE3011E NCE3011E

Pb Free Producthttp://www.ncepower.com NCE3010SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =10A RDS(ON)

 8.4. Size:296K  ncepower
 nce3015s.pdf

NCE3011E NCE3011E

http://www.ncepower.com NCE3015SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =15A Schematic diagram RDS(ON)

 8.5. Size:994K  cn vbsemi
 nce3010s.pdf

NCE3011E NCE3011E

NCE3010Swww.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS

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