NCE3050 Todos los transistores

 

NCE3050 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE3050
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: TO220
 

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NCE3050 Datasheet (PDF)

 ..1. Size:336K  ncepower
 nce3050.pdf pdf_icon

NCE3050

Pb Free Producthttp://www.ncepower.com NCE3050NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

 0.1. Size:372K  ncepower
 nce3050ka.pdf pdf_icon

NCE3050

Pb Free ProductNCE3050KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

 0.2. Size:311K  ncepower
 nce3050i.pdf pdf_icon

NCE3050

Pb Free Producthttp://www.ncepower.com NCE3050INCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

 0.3. Size:399K  ncepower
 nce3050k.pdf pdf_icon

NCE3050

Pb Free Producthttp://www.ncepower.com NCE3050KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE2312A , NCE2333Y , NCE3008M , NCE3011E , NCE3018AS , NCE3020Q , NCE3025Q , NCE3035Q , 75N75 , NCE3050K , NCE3065K , NCE3080IA , NCE3080K , NCE3090K , NCE3095G , NCE3095K , NCE30D0808J .

History: FQAF33N10 | 2SK1712

 

 
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