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NCE30H10AK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE30H10AK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 472.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO252
 

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NCE30H10AK Datasheet (PDF)

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NCE30H10AK

http://www.ncepower.com NCE30H10AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 6.1. Size:331K  ncepower
 nce30h10g.pdf pdf_icon

NCE30H10AK

http://www.ncepower.com NCE30H10GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =100A used in a wide variety of applications. RDS(ON)=1.9m (typical) @ VGS=10V RDS(ON)=2.9m (typical) @ VGS=4.5V Application DC/

 6.2. Size:681K  ncepower
 nce30h10bk.pdf pdf_icon

NCE30H10AK

http://www.ncepower.com NCE30H10BKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H10BK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =100ADS DR

 6.3. Size:373K  ncepower
 nce30h10.pdf pdf_icon

NCE30H10AK

Pb Free Producthttp://www.ncepower.com NCE30H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE3065K , NCE3080IA , NCE3080K , NCE3090K , NCE3095G , NCE3095K , NCE30D0808J , NCE30D2519K , RU6888R , NCE30H10K , NCE30H11BK , NCE30H11K , NCE30H12 , NCE30H14K , NCE30H15 , NCE30H15K , NCE30H29D .

History: BF1211 | DAC060N120P1 | 24NM60L-TF3-T | SLF12N60C | GSM1013E

 

 
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