NCE30ND07AS Todos los transistores

 

NCE30ND07AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE30ND07AS
   Código: 30ND07AS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 7 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.2 V
   Carga de la puerta (Qg): 9.4 nC
   Tiempo de subida (tr): 3 nS
   Conductancia de drenaje-sustrato (Cd): 65 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0235 Ohm
   Paquete / Cubierta: SOP8

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NCE30ND07AS Datasheet (PDF)

 ..1. Size:368K  ncepower
nce30nd07as.pdf

NCE30ND07AS
NCE30ND07AS

NCE30ND07AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =7A RDS(ON)

 5.1. Size:356K  ncepower
nce30nd07s.pdf

NCE30ND07AS
NCE30ND07AS

Pb Free ProductNCE30ND07Shttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =30V,ID =7A RDS(ON)

 5.2. Size:292K  ncepower
nce30nd07bs.pdf

NCE30ND07AS
NCE30ND07AS

NCE30ND07BShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07BS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =6.5A RDS(ON)

 6.1. Size:384K  ncepower
nce30nd09s.pdf

NCE30ND07AS
NCE30ND07AS

Pb Free Producthttp://www.ncepower.com NCE30ND09SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =9A RDS(ON)

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