All MOSFET. NCE30ND07AS Datasheet

 

NCE30ND07AS Datasheet and Replacement


   Type Designator: NCE30ND07AS
   Marking Code: 30ND07AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.4 nC
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0235 Ohm
   Package: SOP8
 

 NCE30ND07AS substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE30ND07AS Datasheet (PDF)

 ..1. Size:368K  ncepower
 nce30nd07as.pdf pdf_icon

NCE30ND07AS

NCE30ND07AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =7A RDS(ON)

 5.1. Size:356K  ncepower
 nce30nd07s.pdf pdf_icon

NCE30ND07AS

Pb Free ProductNCE30ND07Shttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =30V,ID =7A RDS(ON)

 5.2. Size:292K  ncepower
 nce30nd07bs.pdf pdf_icon

NCE30ND07AS

NCE30ND07BShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07BS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =6.5A RDS(ON)

 6.1. Size:384K  ncepower
 nce30nd09s.pdf pdf_icon

NCE30ND07AS

Pb Free Producthttp://www.ncepower.com NCE30ND09SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =9A RDS(ON)

SHOW MORE

Datasheet: NCE30H10K , NCE30H11BK , NCE30H11K , NCE30H12 , NCE30H14K , NCE30H15 , NCE30H15K , NCE30H29D , AON7403 , NCE30ND07S , NCE30ND09S , NCE30NP07S , NCE30NP1812K , NCE30P12S , NCE30P15S , NCE30P20Q , NCE30P25S .

Keywords - NCE30ND07AS MOSFET datasheet

 NCE30ND07AS cross reference
 NCE30ND07AS equivalent finder
 NCE30ND07AS lookup
 NCE30ND07AS substitution
 NCE30ND07AS replacement

 

 
Back to Top

 


 
.