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NCE30ND09S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE30ND09S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: SOP8
 

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NCE30ND09S Datasheet (PDF)

 ..1. Size:384K  ncepower
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NCE30ND09S

Pb Free Producthttp://www.ncepower.com NCE30ND09SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =9A RDS(ON)

 6.1. Size:356K  ncepower
nce30nd07s.pdf pdf_icon

NCE30ND09S

Pb Free ProductNCE30ND07Shttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =30V,ID =7A RDS(ON)

 6.2. Size:368K  ncepower
nce30nd07as.pdf pdf_icon

NCE30ND09S

NCE30ND07AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =7A RDS(ON)

 6.3. Size:292K  ncepower
nce30nd07bs.pdf pdf_icon

NCE30ND09S

NCE30ND07BShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07BS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =6.5A RDS(ON)

Otros transistores... NCE30H11K , NCE30H12 , NCE30H14K , NCE30H15 , NCE30H15K , NCE30H29D , NCE30ND07AS , NCE30ND07S , EMB04N03H , NCE30NP07S , NCE30NP1812K , NCE30P12S , NCE30P15S , NCE30P20Q , NCE30P25S , NCE30P28Q , NCE30P30G .

History: HSBG2024 | NCE30H15K | SIS472ADN | STB25NM50N-1 | HSCB20D03 | HSCE6032 | WPM3407

 

 
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