NCE30NP07S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE30NP07S

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2 nS

Cossⓘ - Capacitancia de salida: 65.2 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: SOP8

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NCE30NP07S datasheet

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NCE30NP07S

http //www.ncepower.com NCE30NP07S N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5

 7.1. Size:380K  ncepower
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NCE30NP07S

NCE30NP1812K http //www.ncepower.com N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =30V,ID =18A

 7.2. Size:928K  ncepower
 nce30np1812g.pdf pdf_icon

NCE30NP07S

http //www.ncepower.com NCE30NP1812G NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812G uses advanced trench technology to provide excellent R and low gate charge.This device is DS(ON) suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram V = 30V,I = 18A V = -30V,I =- 12A DS D DS D R

 7.3. Size:437K  ncepower
 nce30np1812q.pdf pdf_icon

NCE30NP07S

http //www.ncepower.com NCE30NP1812Q NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram VDS = 30V,ID = 18A VDS = -30V,ID =- 12A

MOSTRAR MÁS

Otros transistores... NCE30H12, NCE30H14K, NCE30H15, NCE30H15K, NCE30H29D, NCE30ND07AS, NCE30ND07S, NCE30ND09S, K2611, NCE30NP1812K, NCE30P12S, NCE30P15S, NCE30P20Q, NCE30P25S, NCE30P28Q, NCE30P30G, NCE30P30K