All MOSFET. NCE30NP07S Datasheet

 

NCE30NP07S MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE30NP07S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.6 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 65.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SOP8

 NCE30NP07S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE30NP07S Datasheet (PDF)

 ..1. Size:425K  ncepower
 nce30np07s.pdf

NCE30NP07S NCE30NP07S

http://www.ncepower.com NCE30NP07SN and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5

 7.1. Size:380K  ncepower
 nce30np1812k.pdf

NCE30NP07S NCE30NP07S

NCE30NP1812Khttp://www.ncepower.com N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =30V,ID =18A

 7.2. Size:928K  ncepower
 nce30np1812g.pdf

NCE30NP07S NCE30NP07S

http://www.ncepower.comNCE30NP1812GNCE N-Channel and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30NP1812G uses advanced trench technology toprovide excellent R and low gate charge.This device isDS(ON)suitable for use in inverter and other applications.Genera FeaturesN-channel P-channelSchematic diagram V = 30V,I = 18A V = -30V,I =- 12ADS D DS DR

 7.3. Size:437K  ncepower
 nce30np1812q.pdf

NCE30NP07S NCE30NP07S

http://www.ncepower.com NCE30NP1812Q NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram VDS = 30V,ID = 18A VDS = -30V,ID =- 12A

 7.4. Size:413K  ncepower
 nce30np4030g.pdf

NCE30NP07S NCE30NP07S

http://www.ncepower.com NCE30NP4030GNCE N&P-Channel complementary Power MOSFET Description The NCE30NP4030G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel VDS = 30V,ID = 40A VDS = -30V,ID =- 30A Schematic diagram RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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