NCE30NP07S Specs and Replacement
Type Designator: NCE30NP07S
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V
Qg ⓘ - Total Gate Charge: 12.6 nC
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 65.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOP8
NCE30NP07S substitution
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NCE30NP07S datasheet
nce30np07s.pdf
http //www.ncepower.com NCE30NP07S N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5... See More ⇒
nce30np1812k.pdf
NCE30NP1812K http //www.ncepower.com N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =30V,ID =18A... See More ⇒
nce30np1812g.pdf
http //www.ncepower.com NCE30NP1812G NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812G uses advanced trench technology to provide excellent R and low gate charge.This device is DS(ON) suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram V = 30V,I = 18A V = -30V,I =- 12A DS D DS D R ... See More ⇒
nce30np1812q.pdf
http //www.ncepower.com NCE30NP1812Q NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram VDS = 30V,ID = 18A VDS = -30V,ID =- 12A ... See More ⇒
Detailed specifications: NCE30H12, NCE30H14K, NCE30H15, NCE30H15K, NCE30H29D, NCE30ND07AS, NCE30ND07S, NCE30ND09S, K2611, NCE30NP1812K, NCE30P12S, NCE30P15S, NCE30P20Q, NCE30P25S, NCE30P28Q, NCE30P30G, NCE30P30K
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