NCE30P15S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE30P15S
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 410 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de NCE30P15S MOSFET
NCE30P15S Datasheet (PDF)
nce30p15s.pdf
Pb Free Producthttp://www.ncepower.com NCE30P15SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON)
nce30p15as.pdf
Pb Free Producthttp://www.ncepower.com NCE30P15ASNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15AS uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -15A Schematic diagram RDS(ON)
nce30p12bs.pdf
http://www.ncepower.comNCE30P12BSNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P12BS uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 4.5V. This device is suitable for use asa load switch or in PWM applications.General Features V = -30V,I = -12A Schematic diagramDS DR
nce30p12s.pdf
Pb Free Producthttp://www.ncepower.com NCE30P12SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1
Otros transistores... NCE30H15K , NCE30H29D , NCE30ND07AS , NCE30ND07S , NCE30ND09S , NCE30NP07S , NCE30NP1812K , NCE30P12S , STP65NF06 , NCE30P20Q , NCE30P25S , NCE30P28Q , NCE30P30G , NCE30P30K , NCE30P50G , NCE3400 , NCE3400AY .
History: VN67AD | JMSH0401PTSQ
History: VN67AD | JMSH0401PTSQ
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