NCE30P15S Todos los transistores

 

NCE30P15S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE30P15S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: SOP8
 

 Búsqueda de reemplazo de NCE30P15S MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCE30P15S Datasheet (PDF)

 ..1. Size:341K  ncepower
nce30p15s.pdf pdf_icon

NCE30P15S

Pb Free Producthttp://www.ncepower.com NCE30P15SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -15A RDS(ON)

 6.1. Size:342K  ncepower
nce30p15as.pdf pdf_icon

NCE30P15S

Pb Free Producthttp://www.ncepower.com NCE30P15ASNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P15AS uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -15A Schematic diagram RDS(ON)

 7.1. Size:710K  ncepower
nce30p12bs.pdf pdf_icon

NCE30P15S

http://www.ncepower.comNCE30P12BSNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P12BS uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 4.5V. This device is suitable for use asa load switch or in PWM applications.General Features V = -30V,I = -12A Schematic diagramDS DR

 7.2. Size:364K  ncepower
nce30p12s.pdf pdf_icon

NCE30P15S

Pb Free Producthttp://www.ncepower.com NCE30P12SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -30V,ID = -1

Otros transistores... NCE30H15K , NCE30H29D , NCE30ND07AS , NCE30ND07S , NCE30ND09S , NCE30NP07S , NCE30NP1812K , NCE30P12S , 2N7002 , NCE30P20Q , NCE30P25S , NCE30P28Q , NCE30P30G , NCE30P30K , NCE30P50G , NCE3400 , NCE3400AY .

History: 3415E | WNMD2162 | WMO15N15T1 | APT10078BLLG | SFQ020N100C3 | GSM4435W | SRC7N65TF

 

 
Back to Top

 


 
.