NCE3400AY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE3400AY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4.8 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET NCE3400AY

NCE3400AY Datasheet (PDF)

..1. Size:247K ncepower
nce3400ay.pdf

http://www.ncepower.com NCE3400AYNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram VDS = 30

6.1. Size:248K ncepower
nce3400a.pdf

Pb Free Producthttp://www.ncepower.com NCE3400ANCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram

6.2. Size:848K cn vbsemi
nce3400a.pdf

NCE3400Awww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

7.1. Size:326K ncepower
nce3400.pdf

Pb Free Producthttp://www.ncepower.com NCE3400NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram

7.2. Size:278K ncepower
nce3400xy.pdf

NCE3400XYhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features VDS = 30

7.3. Size:298K ncepower
nce3400x.pdf

http://www.ncepower.com NCE3400XNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram VDS = 30V,

7.4. Size:238K ncepower
nce3400e.pdf

http://www.ncepower.com NCE3400ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE3400E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protested. Schematic diagram General Features

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