NCE3400AY Datasheet. Specs and Replacement

Type Designator: NCE3400AY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: SOT23

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NCE3400AY datasheet

 ..1. Size:247K  ncepower
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NCE3400AY

http //www.ncepower.com NCE3400AY NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram VDS = 30... See More ⇒

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NCE3400AY

Pb Free Product http //www.ncepower.com NCE3400A NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram... See More ⇒

 6.2. Size:848K  cn vbsemi
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NCE3400AY

NCE3400A www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G... See More ⇒

 7.1. Size:326K  ncepower
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NCE3400AY

Pb Free Product http //www.ncepower.com NCE3400 NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram ... See More ⇒

Detailed specifications: NCE30P15S, NCE30P20Q, NCE30P25S, NCE30P28Q, NCE30P30G, NCE30P30K, NCE30P50G, NCE3400, IRF3205, NCE3400X, NCE3401, NCE3404Y, NCE3406N, NCE3407, NCE3407AY, NCE3415, NCE3416

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs