NCE3404Y MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE3404Y
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 3 nS
Conductancia de drenaje-sustrato (Cd): 65.2 pF
Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
Paquete / Cubierta: SOT23
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NCE3404Y Datasheet (PDF)
nce3404y.pdf
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http://www.ncepower.com NCE3404YNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE3404Y uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. SGenera Features Schematic diagram VDS = 30V,ID = 5.8A RDS(ON)
nce3404x.pdf
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http://www.ncepower.comNCE3404XNCE N-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE3404X uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages as low as 4.5V. This device is suitable for use as aBattery protection or in other Switching application.SSchematic diagramGeneral Features V = 30V,I = 5.8A
nce3404.pdf
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Pb Free Producthttp://www.ncepower.com NCE3404NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable Gfor use as a load switch and PWM applications. SGenera Features VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)
nce3404.pdf
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NCE3404www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G
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