All MOSFET. NCE3404Y Datasheet

 

NCE3404Y Datasheet and Replacement


   Type Designator: NCE3404Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 65.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOT23
 

 NCE3404Y substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE3404Y Datasheet (PDF)

 ..1. Size:253K  ncepower
nce3404y.pdf pdf_icon

NCE3404Y

http://www.ncepower.com NCE3404YNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE3404Y uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. SGenera Features Schematic diagram VDS = 30V,ID = 5.8A RDS(ON)

 7.1. Size:812K  ncepower
nce3404x.pdf pdf_icon

NCE3404Y

http://www.ncepower.comNCE3404XNCE N-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE3404X uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages as low as 4.5V. This device is suitable for use as aBattery protection or in other Switching application.SSchematic diagramGeneral Features V = 30V,I = 5.8A

 7.2. Size:321K  ncepower
nce3404.pdf pdf_icon

NCE3404Y

Pb Free Producthttp://www.ncepower.com NCE3404NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable Gfor use as a load switch and PWM applications. SGenera Features VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)

 7.3. Size:895K  cn vbsemi
nce3404.pdf pdf_icon

NCE3404Y

NCE3404www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

Datasheet: NCE30P28Q , NCE30P30G , NCE30P30K , NCE30P50G , NCE3400 , NCE3400AY , NCE3400X , NCE3401 , 20N60 , NCE3406N , NCE3407 , NCE3407AY , NCE3415 , NCE3416 , NCE3420 , NCE4009S , NCE4012S .

History: SWF8N65DB | IRFB4137PBF

Keywords - NCE3404Y MOSFET datasheet

 NCE3404Y cross reference
 NCE3404Y equivalent finder
 NCE3404Y lookup
 NCE3404Y substitution
 NCE3404Y replacement

 

 
Back to Top

 


 
.