NCE3404Y Specs and Replacement
Type Designator: NCE3404Y
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 65.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT23
NCE3404Y substitution
- MOSFET ⓘ Cross-Reference Search
NCE3404Y datasheet
nce3404y.pdf
http //www.ncepower.com NCE3404Y NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE3404Y uses advanced trench technology to provide G excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. S Genera Features Schematic diagram VDS = 30V,ID = 5.8A RDS(ON) ... See More ⇒
nce3404x.pdf
http //www.ncepower.com NCE3404X NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3404X uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram General Features V = 30V,I = 5.8A... See More ⇒
nce3404.pdf
NCE3404 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G ... See More ⇒
Detailed specifications: NCE30P28Q, NCE30P30G, NCE30P30K, NCE30P50G, NCE3400, NCE3400AY, NCE3400X, NCE3401, 20N60, NCE3406N, NCE3407, NCE3407AY, NCE3415, NCE3416, NCE3420, NCE4009S, NCE4012S
Keywords - NCE3404Y MOSFET specs
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