NCE3407 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE3407

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.5 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: SOT23

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NCE3407 datasheet

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 nce3407.pdf pdf_icon

NCE3407

Pb Free Product http //www.ncepower.com NCE3407 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3407 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. S General Features VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

 0.1. Size:602K  ncepower
 nce3407a.pdf pdf_icon

NCE3407

http //www.ncepower.com NCE3407A NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3407A uses advanced trench technology to provide excellent R , This device is suitable for use as a load DS(ON) G switch or in PWM applications. General Features S V = -30V,I = -4.3A DS D Schematic diagram R

 0.2. Size:261K  ncepower
 nce3407ay.pdf pdf_icon

NCE3407

Pb Free Product http //www.ncepower.com NCE3407AY NCE P-Channel Enhancement Mode Power MOSFET D Description The NCE3407AY uses advanced trench technology to provide G excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -30V,ID = -4.3A RDS(ON)

 0.3. Size:729K  ncepower
 nce3407e.pdf pdf_icon

NCE3407

Pb Free Product http //www.ncepower.com NCE3407E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3407E uses advanced trench technology to provide excellent R . This device is suitable for use as a load DS(ON) switch or in PWM applications.It is ESD protected. General Features V = -30V,I = -4.3A Schematic diagram DS D R = 28m @ V =-10V (typ) DS(ON) GS R = 38m

MOSTRAR MÁS

Otros transistores... NCE30P30K, NCE30P50G, NCE3400, NCE3400AY, NCE3400X, NCE3401, NCE3404Y, NCE3406N, IRF540, NCE3407AY, NCE3415, NCE3416, NCE3420, NCE4009S, NCE4012S, NCE4060I, NCE4060K