All MOSFET. NCE3407 Datasheet

 

NCE3407 Datasheet and Replacement


   Type Designator: NCE3407
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT23
 

 NCE3407 substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE3407 Datasheet (PDF)

 ..1. Size:281K  ncepower
nce3407.pdf pdf_icon

NCE3407

Pb Free Producthttp://www.ncepower.com NCE3407NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3407 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

 0.1. Size:602K  ncepower
nce3407a.pdf pdf_icon

NCE3407

http://www.ncepower.comNCE3407ANCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE3407A uses advanced trench technology to provideexcellent R , This device is suitable for use as a loadDS(ON)Gswitch or in PWM applications.General FeaturesS V = -30V,I = -4.3ADS DSchematic diagramR

 0.2. Size:261K  ncepower
nce3407ay.pdf pdf_icon

NCE3407

Pb Free Producthttp://www.ncepower.com NCE3407AYNCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE3407AY uses advanced trench technology to provide Gexcellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -30V,ID = -4.3A RDS(ON)

 0.3. Size:729K  ncepower
nce3407e.pdf pdf_icon

NCE3407

Pb Free Producthttp://www.ncepower.comNCE3407ENCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3407E uses advanced trench technology to provideexcellent R . This device is suitable for use as a loadDS(ON)switch or in PWM applications.It is ESD protected.General Features V = -30V,I = -4.3A Schematic diagramDS DR = 28m @ V =-10V (typ)DS(ON) GSR = 38m

Datasheet: NCE30P30K , NCE30P50G , NCE3400 , NCE3400AY , NCE3400X , NCE3401 , NCE3404Y , NCE3406N , IRF540N , NCE3407AY , NCE3415 , NCE3416 , NCE3420 , NCE4009S , NCE4012S , NCE4060I , NCE4060K .

History: VS2622AA

Keywords - NCE3407 MOSFET datasheet

 NCE3407 cross reference
 NCE3407 equivalent finder
 NCE3407 lookup
 NCE3407 substitution
 NCE3407 replacement

 

 
Back to Top

 


 
.