All MOSFET. NCE3407 Datasheet

 

NCE3407 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE3407
   Marking Code: 3407
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.5 nC
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT23

 NCE3407 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE3407 Datasheet (PDF)

 ..1. Size:281K  ncepower
 nce3407.pdf

NCE3407 NCE3407

Pb Free Producthttp://www.ncepower.com NCE3407NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3407 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

 0.1. Size:602K  ncepower
 nce3407a.pdf

NCE3407 NCE3407

http://www.ncepower.comNCE3407ANCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE3407A uses advanced trench technology to provideexcellent R , This device is suitable for use as a loadDS(ON)Gswitch or in PWM applications.General FeaturesS V = -30V,I = -4.3ADS DSchematic diagramR

 0.2. Size:261K  ncepower
 nce3407ay.pdf

NCE3407 NCE3407

Pb Free Producthttp://www.ncepower.com NCE3407AYNCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE3407AY uses advanced trench technology to provide Gexcellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -30V,ID = -4.3A RDS(ON)

 0.3. Size:729K  ncepower
 nce3407e.pdf

NCE3407 NCE3407

Pb Free Producthttp://www.ncepower.comNCE3407ENCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3407E uses advanced trench technology to provideexcellent R . This device is suitable for use as a loadDS(ON)switch or in PWM applications.It is ESD protected.General Features V = -30V,I = -4.3A Schematic diagramDS DR = 28m @ V =-10V (typ)DS(ON) GSR = 38m

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