NCE3407AY Todos los transistores

 

NCE3407AY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE3407AY
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: SOT23
 

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NCE3407AY Datasheet (PDF)

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 nce3407ay.pdf pdf_icon

NCE3407AY

Pb Free Producthttp://www.ncepower.com NCE3407AYNCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE3407AY uses advanced trench technology to provide Gexcellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -30V,ID = -4.3A RDS(ON)

 6.1. Size:602K  ncepower
 nce3407a.pdf pdf_icon

NCE3407AY

http://www.ncepower.comNCE3407ANCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE3407A uses advanced trench technology to provideexcellent R , This device is suitable for use as a loadDS(ON)Gswitch or in PWM applications.General FeaturesS V = -30V,I = -4.3ADS DSchematic diagramR

 7.1. Size:281K  ncepower
 nce3407.pdf pdf_icon

NCE3407AY

Pb Free Producthttp://www.ncepower.com NCE3407NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3407 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

 7.2. Size:729K  ncepower
 nce3407e.pdf pdf_icon

NCE3407AY

Pb Free Producthttp://www.ncepower.comNCE3407ENCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3407E uses advanced trench technology to provideexcellent R . This device is suitable for use as a loadDS(ON)switch or in PWM applications.It is ESD protected.General Features V = -30V,I = -4.3A Schematic diagramDS DR = 28m @ V =-10V (typ)DS(ON) GSR = 38m

MOSTRAR MÁS

Otros transistores... NCE30P50G , NCE3400 , NCE3400AY , NCE3400X , NCE3401 , NCE3404Y , NCE3406N , NCE3407 , 50N06 , NCE3415 , NCE3416 , NCE3420 , NCE4009S , NCE4012S , NCE4060I , NCE4060K , NCE4080 .

History: IPB054N08N3G | 10N80L-TC3-T | BLP05N08G-B

 

 
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