NCE3415 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE3415

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 165 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: SOT23

 Búsqueda de reemplazo de NCE3415 MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE3415 datasheet

 ..1. Size:283K  ncepower
 nce3415.pdf pdf_icon

NCE3415

Pb Free Product http //www.ncepower.com NCE3415 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A S

 0.1. Size:263K  ncepower
 nce3415y.pdf pdf_icon

NCE3415

Pb Free Product http //www.ncepower.com NCE3415Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 0.2. Size:242K  ncepower
 nce3415e.pdf pdf_icon

NCE3415

http //www.ncepower.com NCE3415E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =-4

 8.1. Size:261K  ncepower
 nce3416.pdf pdf_icon

NCE3415

Pb Free Product http //www.ncepower.com NCE3416 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = 20V,ID =6.5A Sc

MOSTRAR MÁS

Otros transistores... NCE3400, NCE3400AY, NCE3400X, NCE3401, NCE3404Y, NCE3406N, NCE3407, NCE3407AY, IRFP460, NCE3416, NCE3420, NCE4009S, NCE4012S, NCE4060I, NCE4060K, NCE4080, NCE4080D