NCE3415
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE3415
Маркировка: 3415
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.4
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 0.9
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 4
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 12
nC
trⓘ -
Время нарастания: 10
ns
Cossⓘ - Выходная емкость: 165
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045
Ohm
Тип корпуса:
SOT23
Аналог (замена) для NCE3415
NCE3415
Datasheet (PDF)
..1. Size:283K ncepower
nce3415.pdf Pb Free Producthttp://www.ncepower.com NCE3415NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A S
0.1. Size:263K ncepower
nce3415y.pdf Pb Free Producthttp://www.ncepower.com NCE3415YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features
0.2. Size:242K ncepower
nce3415e.pdf http://www.ncepower.com NCE3415ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =-4
8.1. Size:261K ncepower
nce3416.pdf Pb Free Producthttp://www.ncepower.com NCE3416NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = 20V,ID =6.5A Sc
8.2. Size:272K ncepower
nce3417.pdf Pb Free Producthttp://www.ncepower.com NCE3417NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -12V,ID
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