NCE3420 Todos los transistores

 

NCE3420 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE3420
   Código: 3420
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.25 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 7.5 nS
   Conductancia de drenaje-sustrato (Cd): 90 pF
   Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET NCE3420

 

NCE3420 Datasheet (PDF)

 ..1. Size:246K  ncepower
nce3420.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3420NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. SSchematic diagram General Features VD

 0.1. Size:318K  ncepower
nce3420x.pdf

NCE3420
NCE3420

http://www.ncepower.com NCE3420XNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE3420X uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. SGeneral Features Schematic diagram VDS = 20V,ID = 6A

 9.1. Size:249K  1
nce3401ay.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3401AYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -30

 9.2. Size:602K  ncepower
nce3407a.pdf

NCE3420
NCE3420

http://www.ncepower.comNCE3407ANCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE3407A uses advanced trench technology to provideexcellent R , This device is suitable for use as a loadDS(ON)Gswitch or in PWM applications.General FeaturesS V = -30V,I = -4.3ADS DSchematic diagramR

 9.3. Size:812K  ncepower
nce3404x.pdf

NCE3420
NCE3420

http://www.ncepower.comNCE3404XNCE N-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE3404X uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages as low as 4.5V. This device is suitable for use as aBattery protection or in other Switching application.SSchematic diagramGeneral Features V = 30V,I = 5.8A

 9.4. Size:248K  ncepower
nce3401a.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3401ANCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401A uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gload switch or in PWM applications. SGeneral Features VDS = -30V,ID = -4.4A Schematic

 9.5. Size:326K  ncepower
nce3400.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3400NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram

 9.6. Size:263K  ncepower
nce3415y.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3415YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 9.7. Size:281K  ncepower
nce3407.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3407NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3407 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

 9.8. Size:283K  ncepower
nce3415.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3415NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A S

 9.9. Size:278K  ncepower
nce3400xy.pdf

NCE3420
NCE3420

NCE3400XYhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features VDS = 30

 9.10. Size:244K  ncepower
nce3402a.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3402ANCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3402A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features

 9.11. Size:271K  ncepower
nce3406an.pdf

NCE3420
NCE3420

http://www.ncepower.com NCE3406ANNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3406AN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 30V,ID = 6A

 9.12. Size:298K  ncepower
nce3400x.pdf

NCE3420
NCE3420

http://www.ncepower.com NCE3400XNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram VDS = 30V,

 9.13. Size:241K  ncepower
nce3401.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3401NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID

 9.14. Size:247K  ncepower
nce3400ay.pdf

NCE3420
NCE3420

http://www.ncepower.com NCE3400AYNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram VDS = 30

 9.15. Size:265K  ncepower
nce3401by.pdf

NCE3420
NCE3420

http://www.ncepower.com NCE3401BYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401BY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -4.4A RD

 9.16. Size:243K  ncepower
nce3401y.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3401YNCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE3401Y uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,

 9.17. Size:267K  ncepower
nce3401ay.pdf

NCE3420
NCE3420

http://www.ncepower.com NCE3401AYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -4.4A RD

 9.18. Size:238K  ncepower
nce3400e.pdf

NCE3420
NCE3420

http://www.ncepower.com NCE3400ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE3400E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protested. Schematic diagram General Features

 9.19. Size:261K  ncepower
nce3407ay.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3407AYNCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE3407AY uses advanced trench technology to provide Gexcellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -30V,ID = -4.3A RDS(ON)

 9.20. Size:283K  ncepower
nce3406n.pdf

NCE3420
NCE3420

http://www.ncepower.com NCE3406NNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3406N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 30V,ID = 6A

 9.21. Size:261K  ncepower
nce3416.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3416NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = 20V,ID =6.5A Sc

 9.22. Size:272K  ncepower
nce3417.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3417NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -12V,ID

 9.23. Size:253K  ncepower
nce3404y.pdf

NCE3420
NCE3420

http://www.ncepower.com NCE3404YNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE3404Y uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. SGenera Features Schematic diagram VDS = 30V,ID = 5.8A RDS(ON)

 9.24. Size:615K  ncepower
nce3401e.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.comNCE3401ENCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3401E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.It is ESD protested.General Features V = -30V,I = -4.4ADS D

 9.25. Size:241K  ncepower
nce3402.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3402NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features

 9.26. Size:242K  ncepower
nce3415e.pdf

NCE3420
NCE3420

http://www.ncepower.com NCE3415ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =-4

 9.27. Size:729K  ncepower
nce3407e.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.comNCE3407ENCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3407E uses advanced trench technology to provideexcellent R . This device is suitable for use as a loadDS(ON)switch or in PWM applications.It is ESD protected.General Features V = -30V,I = -4.3A Schematic diagramDS DR = 28m @ V =-10V (typ)DS(ON) GSR = 38m

 9.28. Size:321K  ncepower
nce3404.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3404NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable Gfor use as a load switch and PWM applications. SGenera Features VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)

 9.29. Size:248K  ncepower
nce3400a.pdf

NCE3420
NCE3420

Pb Free Producthttp://www.ncepower.com NCE3400ANCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram

 9.30. Size:895K  cn vbsemi
nce3404.pdf

NCE3420
NCE3420

NCE3404www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

 9.31. Size:848K  cn vbsemi
nce3400a.pdf

NCE3420
NCE3420

NCE3400Awww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

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