NCE40H12K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE40H12K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 970 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO252

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NCE40H12K datasheet

 ..1. Size:458K  ncepower
 nce40h12k.pdf pdf_icon

NCE40H12K

 6.1. Size:401K  ncepower
 nce40h12.pdf pdf_icon

NCE40H12K

Pb Free Product NCE40H12 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 6.2. Size:392K  ncepower
 nce40h12i.pdf pdf_icon

NCE40H12K

Pb Free Product NCE40H12I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 6.3. Size:664K  ncepower
 nce40h12a.pdf pdf_icon

NCE40H12K

NCE40H12A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12A uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =120A DS D R

MOSTRAR MÁS

Otros transistores... NCE4012S, NCE4060I, NCE4060K, NCE4080, NCE4080D, NCE4080K, NCE40H12, NCE40H12I, AON6414A, NCE40H20A, NCE40H21, NCE40H29D, NCE40ND0812S, NCE40P05S, NCE40P07S, NCE40P13S, NCE40P15K