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NCE40H12K Spec and Replacement


   Type Designator: NCE40H12K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 970 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO252

 NCE40H12K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE40H12K Specs

 ..1. Size:458K  ncepower
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NCE40H12K

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 6.1. Size:401K  ncepower
 nce40h12.pdf pdf_icon

NCE40H12K

Pb Free Product NCE40H12 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON) ... See More ⇒

 6.2. Size:392K  ncepower
 nce40h12i.pdf pdf_icon

NCE40H12K

Pb Free Product NCE40H12I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON) ... See More ⇒

 6.3. Size:664K  ncepower
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NCE40H12K

NCE40H12A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12A uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =120A DS D R ... See More ⇒

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Detailed specifications: NCE4012S , NCE4060I , NCE4060K , NCE4080 , NCE4080D , NCE4080K , NCE40H12 , NCE40H12I , AON6414A , NCE40H20A , NCE40H21 , NCE40H29D , NCE40ND0812S , NCE40P05S , NCE40P07S , NCE40P13S , NCE40P15K .

Keywords - NCE40H12K MOSFET specs

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