NCE40H21 Todos los transistores

 

NCE40H21 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE40H21
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 310 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 210 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 239 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 1160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de NCE40H21 MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCE40H21 Datasheet (PDF)

 ..1. Size:361K  ncepower
 nce40h21.pdf pdf_icon

NCE40H21

Pb Free Producthttp://www.ncepower.com NCE40H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =210A Schematic diagram RDS(ON)

 7.1. Size:339K  ncepower
 nce40h25ll.pdf pdf_icon

NCE40H21

http://www.ncepower.com NCE40H25LLNCE N-Channel Enhancement Mode Power MOSFET General Features Description VDS =40V ,ID =250A The NCE40H25LL uses advanced trench technology and RDS(ON)

 7.2. Size:398K  ncepower
 nce40h29d.pdf pdf_icon

NCE40H21

Pb Free Producthttp://www.ncepower.com NCE40H29DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =290A RDS(ON)

 7.3. Size:336K  ncepower
 nce40h20a.pdf pdf_icon

NCE40H21

Pb Free Producthttp://www.ncepower.com NCE40H20ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 40V,ID =200A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE4060K , NCE4080 , NCE4080D , NCE4080K , NCE40H12 , NCE40H12I , NCE40H12K , NCE40H20A , IRF9540 , NCE40H29D , NCE40ND0812S , NCE40P05S , NCE40P07S , NCE40P13S , NCE40P15K , NCE40P40K , NCE40P40L .

History: NP30N04QUK | RF1S640

 

 
Back to Top

 


 
.