NCE40H21 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE40H21
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 310 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 210 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 1160 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de NCE40H21 MOSFET
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NCE40H21 datasheet
nce40h21.pdf
Pb Free Product http //www.ncepower.com NCE40H21 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =210A Schematic diagram RDS(ON)
nce40h25ll.pdf
http //www.ncepower.com NCE40H25LL NCE N-Channel Enhancement Mode Power MOSFET General Features Description VDS =40V ,ID =250A The NCE40H25LL uses advanced trench technology and RDS(ON)
nce40h29d.pdf
Pb Free Product http //www.ncepower.com NCE40H29D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =290A RDS(ON)
nce40h20a.pdf
Pb Free Product http //www.ncepower.com NCE40H20A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 40V,ID =200A RDS(ON)
Otros transistores... NCE4060K, NCE4080, NCE4080D, NCE4080K, NCE40H12, NCE40H12I, NCE40H12K, NCE40H20A, 2N7000, NCE40H29D, NCE40ND0812S, NCE40P05S, NCE40P07S, NCE40P13S, NCE40P15K, NCE40P40K, NCE40P40L
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