NCE40H21 Todos los transistores

 

NCE40H21 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE40H21
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 310 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 210 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 239 nC
   Tiempo de subida (tr): 40 nS
   Conductancia de drenaje-sustrato (Cd): 1160 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0032 Ohm
   Paquete / Cubierta: TO220

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NCE40H21 Datasheet (PDF)

 ..1. Size:361K  ncepower
nce40h21.pdf

NCE40H21
NCE40H21

Pb Free Producthttp://www.ncepower.com NCE40H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =210A Schematic diagram RDS(ON)

 7.1. Size:339K  ncepower
nce40h25ll.pdf

NCE40H21
NCE40H21

http://www.ncepower.com NCE40H25LLNCE N-Channel Enhancement Mode Power MOSFET General Features Description VDS =40V ,ID =250A The NCE40H25LL uses advanced trench technology and RDS(ON)

 7.2. Size:398K  ncepower
nce40h29d.pdf

NCE40H21
NCE40H21

Pb Free Producthttp://www.ncepower.com NCE40H29DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =290A RDS(ON)

 7.3. Size:336K  ncepower
nce40h20a.pdf

NCE40H21
NCE40H21

Pb Free Producthttp://www.ncepower.com NCE40H20ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 40V,ID =200A RDS(ON)

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