NCE40P07S Todos los transistores

 

NCE40P07S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE40P07S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SOP8
 

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NCE40P07S Datasheet (PDF)

 ..1. Size:446K  ncepower
 nce40p07s.pdf pdf_icon

NCE40P07S

Pb Free Producthttp://www.ncepower.com NCE40P07SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6.2A RDS(ON)

 7.1. Size:293K  ncepower
 nce40p05y.pdf pdf_icon

NCE40P07S

Pb Free Producthttp://www.ncepower.com NCE40P05YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS =-40V,ID =-5.3A SRDS(ON)

 7.2. Size:396K  ncepower
 nce40p06s.pdf pdf_icon

NCE40P07S

Pb Free Producthttp://www.ncepower.com NCE40P06SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6A RDS(ON)

 7.3. Size:371K  ncepower
 nce40p05s.pdf pdf_icon

NCE40P07S

Pb Free Producthttp://www.ncepower.com NCE40P05SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-5.3A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE40H12 , NCE40H12I , NCE40H12K , NCE40H20A , NCE40H21 , NCE40H29D , NCE40ND0812S , NCE40P05S , AON7408 , NCE40P13S , NCE40P15K , NCE40P40K , NCE40P40L , NCE40P70K , NCE4435 , NCE4606A , NCE4614 .

History: SQM120N03-1M5L | UTT80N08 | WMO80R720S | IPA80R450P7 | SRC60R037B | TMW20N65HG | SFS06R06GF

 

 
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