NCE40P07S datasheet, аналоги, основные параметры

Наименование производителя: NCE40P07S  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 215 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm

Тип корпуса: SOP8

  📄📄 Копировать 

Аналог (замена) для NCE40P07S

- подборⓘ MOSFET транзистора по параметрам

 

NCE40P07S даташит

 ..1. Size:446K  ncepower
 nce40p07s.pdf pdf_icon

NCE40P07S

Pb Free Product http //www.ncepower.com NCE40P07S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6.2A RDS(ON)

 7.1. Size:293K  ncepower
 nce40p05y.pdf pdf_icon

NCE40P07S

Pb Free Product http //www.ncepower.com NCE40P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDS =-40V,ID =-5.3A S RDS(ON)

 7.2. Size:396K  ncepower
 nce40p06s.pdf pdf_icon

NCE40P07S

Pb Free Product http //www.ncepower.com NCE40P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6A RDS(ON)

 7.3. Size:371K  ncepower
 nce40p05s.pdf pdf_icon

NCE40P07S

Pb Free Product http //www.ncepower.com NCE40P05S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-5.3A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE40H12, NCE40H12I, NCE40H12K, NCE40H20A, NCE40H21, NCE40H29D, NCE40ND0812S, NCE40P05S, IRFP250N, NCE40P13S, NCE40P15K, NCE40P40K, NCE40P40L, NCE40P70K, NCE4435, NCE4606A, NCE4614