NCE6003M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE6003M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 34 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SOT89

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NCE6003M datasheet

 ..1. Size:260K  ncepower
 nce6003m.pdf pdf_icon

NCE6003M

Pb Free Product http //www.ncepower.com NCE6003M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S General Feature Schematic diagram

 7.1. Size:244K  ncepower
 nce6003.pdf pdf_icon

NCE6003M

Pb Free Product http //www.ncepower.com NCE6003 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE6003 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S Schematic Diagram General Features

 7.2. Size:671K  ncepower
 nce6003xm.pdf pdf_icon

NCE6003M

http //www.ncepower.com NCE6003XM NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE6003XM uses advanced trench technology to provide excellent R , low gate charge. This device is suitable for DS(ON) G use as a Battery protection or in other switching application. S General Features Schematic Diagram V =60V,I =3A DS D R

 7.3. Size:706K  ncepower
 nce6003xy.pdf pdf_icon

NCE6003M

http //www.ncepower.com NCE6003XY NCE N-Channel Enhancement Mode Power MOSFET D Description G The NCE6003XY uses advanced trench technology to provide excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S Schematic Diagram General Features V =60V,I =3A DS D R

MOSTRAR MÁS

Otros transistores... NCE4801, NCE4963, NCE55H12, NCE55P15I, NCE55P15K, NCE55P30, NCE55P30K, NCE6003, 13N50, NCE6003Y, NCE6005AR, NCE6008AS, NCE6009AS, NCE6012AS, NCE6020AI, NCE6020AK, NCE6045G