NCE6003M Todos los transistores

 

NCE6003M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE6003M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 34 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT89
     - Selección de transistores por parámetros

 

NCE6003M Datasheet (PDF)

 ..1. Size:260K  ncepower
 nce6003m.pdf pdf_icon

NCE6003M

Pb Free Producthttp://www.ncepower.com NCE6003MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SGeneral Feature Schematic diagram

 7.1. Size:244K  ncepower
 nce6003.pdf pdf_icon

NCE6003M

Pb Free Producthttp://www.ncepower.com NCE6003NCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE6003 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic Diagram General Features

 7.2. Size:671K  ncepower
 nce6003xm.pdf pdf_icon

NCE6003M

http://www.ncepower.comNCE6003XMNCE N-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE6003XM uses advanced trench technology to provideexcellent R , low gate charge. This device is suitable forDS(ON)Guse as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =60V,I =3ADS DR

 7.3. Size:706K  ncepower
 nce6003xy.pdf pdf_icon

NCE6003M

http://www.ncepower.comNCE6003XYNCE N-Channel Enhancement Mode Power MOSFETDDescriptionGThe NCE6003XY uses advanced trench technology to provideexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =3ADS DR

MOSTRAR MÁS

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History: VBZA4953A | MTNK7S3 | TK65G10N1 | STD5407N | HFP8N70U | AP9465BGH | MTP20N20E

 

 
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