All MOSFET. NCE6003M Datasheet

 

NCE6003M Datasheet and Replacement


   Type Designator: NCE6003M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT89
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NCE6003M Datasheet (PDF)

 ..1. Size:260K  ncepower
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NCE6003M

Pb Free Producthttp://www.ncepower.com NCE6003MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SGeneral Feature Schematic diagram

 7.1. Size:244K  ncepower
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NCE6003M

Pb Free Producthttp://www.ncepower.com NCE6003NCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE6003 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic Diagram General Features

 7.2. Size:671K  ncepower
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NCE6003M

http://www.ncepower.comNCE6003XMNCE N-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE6003XM uses advanced trench technology to provideexcellent R , low gate charge. This device is suitable forDS(ON)Guse as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =60V,I =3ADS DR

 7.3. Size:706K  ncepower
nce6003xy.pdf pdf_icon

NCE6003M

http://www.ncepower.comNCE6003XYNCE N-Channel Enhancement Mode Power MOSFETDDescriptionGThe NCE6003XY uses advanced trench technology to provideexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =3ADS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STD6N60M2 | IRFP21N60L | AP2318GEN-HF | STT3P2UH7 | UPA2756GR | IXTA08N120P

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