NCE6005AR Todos los transistores

 

NCE6005AR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE6005AR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOT223
 

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NCE6005AR Datasheet (PDF)

 ..1. Size:315K  ncepower
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NCE6005AR

Pb Free Producthttp://www.ncepower.com NCE6005ARNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=60V,ID=5A RDS(ON)

 6.1. Size:417K  ncepower
 nce6005as.pdf pdf_icon

NCE6005AR

Pb Free Producthttp://www.ncepower.com NCE6005ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS=60V,ID=5A RDS(ON)

 6.2. Size:707K  ncepower
 nce6005an.pdf pdf_icon

NCE6005AR

NCE6005ANhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6005AN uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =5ADS DR

 6.3. Size:915K  cn vbsemi
 nce6005as.pdf pdf_icon

NCE6005AR

NCE6005ASwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe

MOSTRAR MÁS

Otros transistores... NCE55H12 , NCE55P15I , NCE55P15K , NCE55P30 , NCE55P30K , NCE6003 , NCE6003M , NCE6003Y , IRF1010E , NCE6008AS , NCE6009AS , NCE6012AS , NCE6020AI , NCE6020AK , NCE6045G , NCE6050A , NCE6050IA .

History: IPB022N04LG | IRFZ44ZPBF

 

 
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