NCE6020AK Todos los transistores

 

NCE6020AK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE6020AK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 45 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 20 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 47 nC
   Tiempo de subida (tr): 2.6 nS
   Conductancia de drenaje-sustrato (Cd): 60 pF
   Resistencia entre drenaje y fuente RDS(on): 0.035 Ohm
   Paquete / Cubierta: TO252

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NCE6020AK Datasheet (PDF)

 ..1. Size:432K  ncepower
nce6020ak.pdf

NCE6020AK
NCE6020AK

Pb Free Producthttp://www.ncepower.com NCE6020AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 6.1. Size:335K  ncepower
nce6020ai.pdf

NCE6020AK
NCE6020AK

Pb Free Producthttp://www.ncepower.com NCE6020AINCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A Schematic diagram RDS(ON)

 6.2. Size:673K  ncepower
nce6020al.pdf

NCE6020AK
NCE6020AK

Pb Free Producthttp://www.ncepower.comNCE6020ALNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020AL uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

 6.3. Size:688K  ncepower
nce6020a.pdf

NCE6020AK
NCE6020AK

Pb Free Producthttp://www.ncepower.comNCE6020ANCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6020A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

 6.4. Size:711K  ncepower
nce6020aq.pdf

NCE6020AK
NCE6020AK

NCE6020AQhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescription General Featureshe NCE6020AQ uses advanced trench technology and design to V = 60V,I = 20ADS Dprovide excellent R with low gate charge. It can be used in a R

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