NCE6045G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE6045G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: DFN5X6-8L

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NCE6045G datasheet

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NCE6045G

Pb Free Product http //www.ncepower.com NCE6045G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6045G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =45A RDS(ON)

 7.1. Size:653K  ncepower
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NCE6045G

http //www.ncepower.com NCE6045XG NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6045XG uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =60V,I =45A DS(ON) DS D be used in a wide variety of applications. R =7.4m (typical) @ V =10V DS(ON) GS R =11.4m (typical) @ V =4.5V Application DS(ON) GS

 7.2. Size:685K  ncepower
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NCE6045G

 8.1. Size:636K  ncepower
 nce6042ag.pdf pdf_icon

NCE6045G

NCE6042AG http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6042AG uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =42A Schematic diagram DS D R

MOSTRAR MÁS

Otros transistores... NCE6003M, NCE6003Y, NCE6005AR, NCE6008AS, NCE6009AS, NCE6012AS, NCE6020AI, NCE6020AK, CS150N03A8, NCE6050A, NCE6050IA, NCE6050KA, NCE6075, NCE6075K, NCE6080A, NCE6080D, NCE6080K