NCE60H15A Todos los transistores

 

NCE60H15A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60H15A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 609 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO220
 

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NCE60H15A datasheet

 ..1. Size:351K  ncepower
 nce60h15a.pdf pdf_icon

NCE60H15A

http //www.ncepower.com NCE60H15A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 0.1. Size:340K  ncepower
 nce60h15ad.pdf pdf_icon

NCE60H15A

http //www.ncepower.com NCE60H15AD NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 0.2. Size:657K  ncepower
 nce60h15at.pdf pdf_icon

NCE60H15A

http //www.ncepower.com NCE60H15AT NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AT uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =150A DS D R

 6.1. Size:610K  ncepower
 nce60h15t.pdf pdf_icon

NCE60H15A

http //www.ncepower.com NCE60H15T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15T uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =150A DS D R

MOSTRAR MÁS

Otros transistores... NCE6050IA , NCE6050KA , NCE6075 , NCE6075K , NCE6080A , NCE6080D , NCE6080K , NCE609 , IRF1407 , NCE60H15AD , NCE60P04R , NCE60P04Y , NCE60P06S , NCE60P09S , NCE60P10K , NCE60P12K , NCE60P14AK .

History: SI7137DP | APG60N10NF

 

 
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