NCE60H15A. Аналоги и основные параметры

Наименование производителя: NCE60H15A

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 220 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 23 ns

Cossⓘ - Выходная емкость: 609 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm

Тип корпуса: TO220

Аналог (замена) для NCE60H15A

- подборⓘ MOSFET транзистора по параметрам

 

NCE60H15A даташит

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NCE60H15A

http //www.ncepower.com NCE60H15A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

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nce60h15ad.pdfpdf_icon

NCE60H15A

http //www.ncepower.com NCE60H15AD NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

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nce60h15at.pdfpdf_icon

NCE60H15A

http //www.ncepower.com NCE60H15AT NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AT uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =150A DS D R

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nce60h15t.pdfpdf_icon

NCE60H15A

http //www.ncepower.com NCE60H15T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15T uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =150A DS D R

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