Справочник MOSFET. NCE60H15A

 

NCE60H15A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE60H15A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 609 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для NCE60H15A

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE60H15A Datasheet (PDF)

 ..1. Size:351K  ncepower
nce60h15a.pdfpdf_icon

NCE60H15A

http://www.ncepower.com NCE60H15ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 0.1. Size:340K  ncepower
nce60h15ad.pdfpdf_icon

NCE60H15A

http://www.ncepower.com NCE60H15ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 0.2. Size:657K  ncepower
nce60h15at.pdfpdf_icon

NCE60H15A

http://www.ncepower.com NCE60H15ATNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

 6.1. Size:610K  ncepower
nce60h15t.pdfpdf_icon

NCE60H15A

http://www.ncepower.com NCE60H15TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

Другие MOSFET... NCE6050IA , NCE6050KA , NCE6075 , NCE6075K , NCE6080A , NCE6080D , NCE6080K , NCE609 , P0903BDG , NCE60H15AD , NCE60P04R , NCE60P04Y , NCE60P06S , NCE60P09S , NCE60P10K , NCE60P12K , NCE60P14AK .

History: NTMFS5C456NL | FHD4N65E | P7006BL

 

 
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