NCE60P12K Todos los transistores

 

NCE60P12K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60P12K
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 90.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

NCE60P12K Datasheet (PDF)

 ..1. Size:417K  ncepower
nce60p12k.pdf pdf_icon

NCE60P12K

Pb Free Producthttp://www.ncepower.com NCE60P12KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-12A RDS(ON)

 6.1. Size:445K  ncepower
nce60p12as.pdf pdf_icon

NCE60P12K

NCE60P12AShttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-12A RDS(ON)

 7.1. Size:410K  ncepower
nce60p16aq.pdf pdf_icon

NCE60P12K

http://www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS Dor power management. R

 7.2. Size:418K  ncepower
nce60p18ak.pdf pdf_icon

NCE60P12K

Pb Free Producthttp://www.ncepower.com NCE60P18AKNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P18AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-18A RDS(ON)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STP55N06L | BUZ358 | STP33N65M2 | RFL1N10L | AUIRF2804

 

 
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