NCE60P12K Specs and Replacement

Type Designator: NCE60P12K

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 90.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO252

NCE60P12K substitution

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NCE60P12K datasheet

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NCE60P12K

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 nce60p12as.pdf pdf_icon

NCE60P12K

NCE60P12AS http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-12A RDS(ON) ... See More ⇒

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NCE60P12K

http //www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS D or power management. R ... See More ⇒

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NCE60P12K

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Detailed specifications: NCE609, NCE60H15A, NCE60H15AD, NCE60P04R, NCE60P04Y, NCE60P06S, NCE60P09S, NCE60P10K, 18N50, NCE60P14AK, NCE60P16AK, NCE60P18AK, NCE60P20K, NCE60P45K, NCE60P50, NCE60P50K, NCE60P55K

Keywords - NCE60P12K MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.