NCE60P20K Todos los transistores

 

NCE60P20K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60P20K
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 60 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 20 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
   Carga de la puerta (Qg): 46.1 nC
   Tiempo de subida (tr): 14 nS
   Conductancia de drenaje-sustrato (Cd): 114 pF
   Resistencia entre drenaje y fuente RDS(on): 0.042 Ohm
   Paquete / Cubierta: TO252

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NCE60P20K Datasheet (PDF)

 ..1. Size:347K  ncepower
nce60p20k.pdf

NCE60P20K
NCE60P20K

http://www.ncepower.com NCE60P20KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-20A RDS(ON)

 7.1. Size:383K  ncepower
nce60p28ak.pdf

NCE60P20K
NCE60P20K

NCE60P28AKhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P28AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-28A RDS(ON)

 7.2. Size:358K  ncepower
nce60p25.pdf

NCE60P20K
NCE60P20K

Pb Free Producthttp://www.ncepower.com NCE60P25NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 7.3. Size:397K  ncepower
nce60p25k.pdf

NCE60P20K
NCE60P20K

Pb Free Producthttp://www.ncepower.com NCE60P25KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 7.4. Size:805K  cn vbsemi
nce60p25k.pdf

NCE60P20K
NCE60P20K

NCE60P25Kwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bri

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