All MOSFET. NCE60P20K Datasheet

 

NCE60P20K MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE60P20K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 60 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
   Maximum Drain Current |Id|: 20 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 46.1 nC
   Rise Time (tr): 14 nS
   Drain-Source Capacitance (Cd): 114 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm
   Package: TO252

 NCE60P20K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE60P20K Datasheet (PDF)

 ..1. Size:347K  ncepower
nce60p20k.pdf

NCE60P20K
NCE60P20K

http://www.ncepower.com NCE60P20KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-20A RDS(ON)

 7.1. Size:383K  ncepower
nce60p28ak.pdf

NCE60P20K
NCE60P20K

NCE60P28AKhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P28AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-28A RDS(ON)

 7.2. Size:358K  ncepower
nce60p25.pdf

NCE60P20K
NCE60P20K

Pb Free Producthttp://www.ncepower.com NCE60P25NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 7.3. Size:397K  ncepower
nce60p25k.pdf

NCE60P20K
NCE60P20K

Pb Free Producthttp://www.ncepower.com NCE60P25KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 7.4. Size:805K  cn vbsemi
nce60p25k.pdf

NCE60P20K
NCE60P20K

NCE60P25Kwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bri

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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