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NCE60P50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60P50
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 95 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 50 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
   Carga de la puerta (Qg): 75 nC
   Tiempo de subida (tr): 17 nS
   Conductancia de drenaje-sustrato (Cd): 719 pF
   Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
   Paquete / Cubierta: TO220

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NCE60P50 Datasheet (PDF)

 ..1. Size:309K  ncepower
nce60p50.pdf

NCE60P50 NCE60P50

Pb Free Producthttp://www.ncepower.com NCE60P50NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

 0.1. Size:627K  ncepower
nce60p50g.pdf

NCE60P50 NCE60P50

http://www.ncepower.comNCE60P50GNCE P-Channel Enhancement Mode Power MOSFETDescriptionGeneral FeaturesThe NCE60P50G uses advanced trench technology and V =-60V,I =-50ADS Ddesign to provide excellent R with low gate charge .ThisDS(ON)R =23m (typical) @ V =-10VDS(ON) GSdevice is well suited for high current load applications. High density cell design for ultra lo

 0.2. Size:407K  ncepower
nce60p50k.pdf

NCE60P50 NCE60P50

Pb Free Producthttp://www.ncepower.com NCE60P50KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

 7.1. Size:303K  ncepower
nce60p55k.pdf

NCE60P50 NCE60P50

http://www.ncepower.com NCE60P55KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-55A RDS(ON)

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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