NCE60P50 Specs and Replacement

Type Designator: NCE60P50

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 95 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 719 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO220

NCE60P50 substitution

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NCE60P50 datasheet

 ..1. Size:309K  ncepower
 nce60p50.pdf pdf_icon

NCE60P50

Pb Free Product http //www.ncepower.com NCE60P50 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON) ... See More ⇒

 0.1. Size:627K  ncepower
 nce60p50g.pdf pdf_icon

NCE60P50

http //www.ncepower.com NCE60P50G NCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE60P50G uses advanced trench technology and V =-60V,I =-50A DS D design to provide excellent R with low gate charge .This DS(ON) R =23m (typical) @ V =-10V DS(ON) GS device is well suited for high current load applications. High density cell design for ultra lo... See More ⇒

 0.2. Size:407K  ncepower
 nce60p50k.pdf pdf_icon

NCE60P50

Pb Free Product http //www.ncepower.com NCE60P50K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON) ... See More ⇒

 7.1. Size:303K  ncepower
 nce60p55k.pdf pdf_icon

NCE60P50

http //www.ncepower.com NCE60P55K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-55A RDS(ON) ... See More ⇒

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Detailed specifications: NCE60P09S, NCE60P10K, NCE60P12K, NCE60P14AK, NCE60P16AK, NCE60P18AK, NCE60P20K, NCE60P45K, 2N60, NCE60P50K, NCE60P55K, NCE65T180D, NCE65T180, NCE65T180F, NCE65T180T, NCE65T1K2, NCE65T1K2D

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