NCE65T180T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65T180T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 188 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 83 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO247

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NCE65T180T datasheet

 ..1. Size:404K  ncepower
 nce65t180t.pdf pdf_icon

NCE65T180T

NCE65T180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap

 5.1. Size:622K  ncepower
 nce65t180d nce65t180 nce65t180f.pdf pdf_icon

NCE65T180T

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, an

 5.2. Size:1722K  ncepower
 nce65t180f nce65t180 nce65t180d.pdf pdf_icon

NCE65T180T

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 190 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indus

 5.3. Size:1722K  ncepower
 nce65t180f.pdf pdf_icon

NCE65T180T

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 190 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indus

MOSTRAR MÁS

Otros transistores... NCE60P20K, NCE60P45K, NCE60P50, NCE60P50K, NCE60P55K, NCE65T180D, NCE65T180, NCE65T180F, STP65NF06, NCE65T1K2, NCE65T1K2D, NCE65T1K2F, NCE65T1K2K, NCE65T1K2I, NCE65T260D, NCE65T260, NCE65T260F