NCE65T180T PDF and Equivalents Search

 

NCE65T180T Specs and Replacement


   Type Designator: NCE65T180T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO247
 

 NCE65T180T substitution

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NCE65T180T datasheet

 ..1. Size:404K  ncepower
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NCE65T180T

NCE65T180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap... See More ⇒

 5.1. Size:622K  ncepower
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NCE65T180T

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, an... See More ⇒

 5.2. Size:1722K  ncepower
nce65t180f nce65t180 nce65t180d.pdf pdf_icon

NCE65T180T

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 190 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indus... See More ⇒

 5.3. Size:1722K  ncepower
nce65t180f.pdf pdf_icon

NCE65T180T

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 190 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indus... See More ⇒

Detailed specifications: NCE60P20K , NCE60P45K , NCE60P50 , NCE60P50K , NCE60P55K , NCE65T180D , NCE65T180 , NCE65T180F , STP65NF06 , NCE65T1K2 , NCE65T1K2D , NCE65T1K2F , NCE65T1K2K , NCE65T1K2I , NCE65T260D , NCE65T260 , NCE65T260F .

Keywords - NCE65T180T MOSFET specs

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