NCE65T180T
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE65T180T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 188
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 21
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 36
nC
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 83
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package:
TO247
NCE65T180T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE65T180T
Datasheet (PDF)
..1. Size:404K ncepower
nce65t180t.pdf 
NCE65T180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap
5.1. Size:622K ncepower
nce65t180d nce65t180 nce65t180f.pdf
NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, an
5.2. Size:1722K ncepower
nce65t180f nce65t180 nce65t180d.pdf
NCE65T180D,NCE65T180,NCE65T180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON) MAXwith low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indus
5.3. Size:1722K ncepower
nce65t180f.pdf
NCE65T180D,NCE65T180,NCE65T180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON) MAXwith low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indus
5.4. Size:494K ncepower
nce65t180v.pdf
NCE65T180V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 199 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap
5.5. Size:1722K ncepower
nce65t180d.pdf
NCE65T180D,NCE65T180,NCE65T180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON) MAXwith low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indus
5.6. Size:1722K ncepower
nce65t180.pdf
NCE65T180D,NCE65T180,NCE65T180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON) MAXwith low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indus
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