NCE65T260 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65T260
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 131 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 74 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de NCE65T260 MOSFET
- Selecciónⓘ de transistores por parámetros
NCE65T260 datasheet
nce65t260d nce65t260 nce65t260f.pdf
NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t260f nce65t260 nce65t260d.pdf
NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t260.pdf
NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t260f.pdf
NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
Otros transistores... NCE65T180F, NCE65T180T, NCE65T1K2, NCE65T1K2D, NCE65T1K2F, NCE65T1K2K, NCE65T1K2I, NCE65T260D, IRF9640, NCE65T260F, NCE65T260I, NCE65T260K, NCE65T2K4I, NCE65T2K4K, NCE65T360D, NCE65T360, NCE65T360F
History: 2SK1890
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