NCE65T260 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE65T260
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 131 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 24.7 nC
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 74 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.26 Ohm
Тип корпуса: TO220
NCE65T260 Datasheet (PDF)
nce65t260d nce65t260 nce65t260f.pdf
NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t260f nce65t260 nce65t260d.pdf
NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t260i nce65t260k.pdf
NCE65T260I,NCE65T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce65t2k4k.pdf
NCE65T2K4INCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t2k4i nce65t2k4k.pdf
NCE65T2K4INCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
