FDC86244 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

May 2013FDC86244N-Channel Shielded Gate PowerTrench MOSFET 150 V, 2.3 A, 144 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 144 m at VGS = 10 V, ID = 2.3 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 188 m a

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFETN-Channel MOSFETFDC86244 (KDC86244)( )SOT-23-6 Unit: mm+0.10.4 -0.1 Features VDS (V) = 150V6 5 4 ID = 2.3 A (VGS = 10V) RDS(ON) 144m (VGS = 10V) RDS(ON) 188m (VGS = 6V)2 31 Fast switching speed+0.020.15 -0.02+0.01-0.01+0.2-0.14 S G 35 D 2D6 D D 1 Absolute Maximum Ratings Ta = 25Paramete

FDC86244www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS

May 2013FDC8602Dual N-Channel Shielded Gate PowerTrench MOSFET 100 V, 1.2 A, 350 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 350 m at VGS = 10 V, ID = 1.2 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 575

June 2010FDC8601N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mFeatures General Description Max rDS(on) = 109 m at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 176 m at VGS = 6 V, ID = 2.1 Abeen optimized for rDS(on), switching performance and High performance trench