FDC86244 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDC86244
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 1.4 nS
   Cossⓘ - Capacitancia de salida: 32 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.144 Ohm
   Paquete / Cubierta: SSOT6

Búsqueda de reemplazo de MOSFET FDC86244

FDC86244 Datasheet (PDF)

..1. Size:332K fairchild semi
fdc86244.pdf

May 2013FDC86244N-Channel Shielded Gate PowerTrench MOSFET 150 V, 2.3 A, 144 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 144 m at VGS = 10 V, ID = 2.3 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 188 m a

..2. Size:397K onsemi
fdc86244.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..3. Size:1294K kexin
fdc86244.pdf

SMD Type MOSFETN-Channel MOSFETFDC86244 (KDC86244)( )SOT-23-6 Unit: mm+0.10.4 -0.1 Features VDS (V) = 150V6 5 4 ID = 2.3 A (VGS = 10V) RDS(ON) 144m (VGS = 10V) RDS(ON) 188m (VGS = 6V)2 31 Fast switching speed+0.020.15 -0.02+0.01-0.01+0.2-0.14 S G 35 D 2D6 D D 1 Absolute Maximum Ratings Ta = 25Paramete

..4. Size:842K cn vbsemi
fdc86244.pdf

FDC86244www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS

9.1. Size:258K fairchild semi
fdc8602.pdf

May 2013FDC8602Dual N-Channel Shielded Gate PowerTrench MOSFET 100 V, 1.2 A, 350 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 350 m at VGS = 10 V, ID = 1.2 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 575

9.2. Size:276K fairchild semi
fdc8601.pdf

June 2010FDC8601N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mFeatures General Description Max rDS(on) = 109 m at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 176 m at VGS = 6 V, ID = 2.1 Abeen optimized for rDS(on), switching performance and High performance trench

Otros transistores... STU1530PL , FDC658AP , FDC855N , STU12L01 , FDC8601 , STU10N25 , FDC8602 , STU10N20 , 2SK3568 , FDD050N03B , STU10N10 , FDD10AN06A0 , FDD10N20LZ , STU10L01 , FDD120AN15A0 , FDD13AN06A0 , FDD13AN06A0F085 .

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