FDC86244
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDC86244
Marking Code: .244'
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.2
nC
trⓘ - Rise Time: 1.4
nS
Cossⓘ -
Output Capacitance: 32
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.144
Ohm
Package:
SSOT6
FDC86244
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDC86244
Datasheet (PDF)
..1. Size:332K fairchild semi
fdc86244.pdf 
May 2013FDC86244N-Channel Shielded Gate PowerTrench MOSFET 150 V, 2.3 A, 144 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 144 m at VGS = 10 V, ID = 2.3 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 188 m a
..2. Size:397K onsemi
fdc86244.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..3. Size:1294K kexin
fdc86244.pdf
SMD Type MOSFETN-Channel MOSFETFDC86244 (KDC86244)( )SOT-23-6 Unit: mm+0.10.4 -0.1 Features VDS (V) = 150V6 5 4 ID = 2.3 A (VGS = 10V) RDS(ON) 144m (VGS = 10V) RDS(ON) 188m (VGS = 6V)2 31 Fast switching speed+0.020.15 -0.02+0.01-0.01+0.2-0.14 S G 35 D 2D6 D D 1 Absolute Maximum Ratings Ta = 25Paramete
..4. Size:842K cn vbsemi
fdc86244.pdf
FDC86244www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS
9.1. Size:258K fairchild semi
fdc8602.pdf
May 2013FDC8602Dual N-Channel Shielded Gate PowerTrench MOSFET 100 V, 1.2 A, 350 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 350 m at VGS = 10 V, ID = 1.2 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 575
9.2. Size:276K fairchild semi
fdc8601.pdf
June 2010FDC8601N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mFeatures General Description Max rDS(on) = 109 m at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 176 m at VGS = 6 V, ID = 2.1 Abeen optimized for rDS(on), switching performance and High performance trench
Datasheet: STU1530PL
, FDC658AP
, FDC855N
, STU12L01
, FDC8601
, STU10N25
, FDC8602
, STU10N20
, K4145
, FDD050N03B
, STU10N10
, FDD10AN06A0
, FDD10N20LZ
, STU10L01
, FDD120AN15A0
, FDD13AN06A0
, FDD13AN06A0F085
.
