NCE65T360D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65T360D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 101 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 54 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm

Encapsulados: TO263

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NCE65T360D datasheet

 ..1. Size:611K  ncepower
 nce65t360d nce65t360 nce65t360f.pdf pdf_icon

NCE65T360D

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, a

 ..2. Size:1699K  ncepower
 nce65t360f nce65t360 nce65t360d.pdf pdf_icon

NCE65T360D

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

 ..3. Size:1699K  ncepower
 nce65t360d.pdf pdf_icon

NCE65T360D

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

 5.1. Size:1699K  ncepower
 nce65t360f.pdf pdf_icon

NCE65T360D

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

MOSTRAR MÁS

Otros transistores... NCE65T1K2I, NCE65T260D, NCE65T260, NCE65T260F, NCE65T260I, NCE65T260K, NCE65T2K4I, NCE65T2K4K, MMIS60R580P, NCE65T360, NCE65T360F, NCE65T360K, NCE65T360I, NCE65T540D, NCE65T540, NCE65T540F, NCE65T540I