NCE65T360D Specs and Replacement

Type Designator: NCE65T360D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 101 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO263

NCE65T360D substitution

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NCE65T360D datasheet

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 nce65t360d nce65t360 nce65t360f.pdf pdf_icon

NCE65T360D

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, a... See More ⇒

 ..2. Size:1699K  ncepower
 nce65t360f nce65t360 nce65t360d.pdf pdf_icon

NCE65T360D

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu... See More ⇒

 ..3. Size:1699K  ncepower
 nce65t360d.pdf pdf_icon

NCE65T360D

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu... See More ⇒

 5.1. Size:1699K  ncepower
 nce65t360f.pdf pdf_icon

NCE65T360D

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu... See More ⇒

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Detailed specifications: NCE65T1K2I, NCE65T260D, NCE65T260, NCE65T260F, NCE65T260I, NCE65T260K, NCE65T2K4I, NCE65T2K4K, MMIS60R580P, NCE65T360, NCE65T360F, NCE65T360K, NCE65T360I, NCE65T540D, NCE65T540, NCE65T540F, NCE65T540I

Keywords - NCE65T360D MOSFET specs

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