NCE65T360 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65T360
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 101 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 54 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de NCE65T360 MOSFET
- Selecciónⓘ de transistores por parámetros
NCE65T360 datasheet
nce65t360d nce65t360 nce65t360f.pdf
NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, a
nce65t360.pdf
NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu
nce65t360f nce65t360 nce65t360d.pdf
NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu
nce65t360f.pdf
NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu
Otros transistores... NCE65T260D, NCE65T260, NCE65T260F, NCE65T260I, NCE65T260K, NCE65T2K4I, NCE65T2K4K, NCE65T360D, AOD4184A, NCE65T360F, NCE65T360K, NCE65T360I, NCE65T540D, NCE65T540, NCE65T540F, NCE65T540I, NCE65T540K
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
7506 mosfet | irlr8726 datasheet | ru7088r mosfet | mp40 transistor | fgpf4636 datasheet | 2sc1945 | c2383 | 2sb681
